MOCVD生长GaN的反应动力学分析与数值模拟

徐谦; 左然; 张红

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MOCVD生长GaN的反应动力学分析与数值模拟

催化、动力学与反应器 | 更新时间：2025-12-10

- MOCVD生长GaN的反应动力学分析与数值模拟
- Analysis of reaction kinetics and numerical simulation of GaN growth by MOCVD
- 化工学报 2009年第2期页码：384-388
- 作者机构：
  
  江苏大学能源与动力工程学院
- 作者简介：
- 基金信息：
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- 网络首发：2009-02-05，
  
  纸质出版：2009-02-05
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徐谦, 左然, 张红. MOCVD生长GaN的反应动力学分析与数值模拟[J]. 化工学报, 2009,(2):384-388.

XU Qian, ZUO Ran, ZHANG Hong. Analysis of reaction kinetics and numerical simulation of GaN growth by MOCVD[J]. CIESC Journal, 2009, (2): 384-388.
徐谦, 左然, 张红. MOCVD生长GaN的反应动力学分析与数值模拟[J]. 化工学报, 2009,(2):384-388. DOI：

XU Qian, ZUO Ran, ZHANG Hong. Analysis of reaction kinetics and numerical simulation of GaN growth by MOCVD[J]. CIESC Journal, 2009, (2): 384-388. DOI：

摘要

提出了GaN生长的主反应和寄生化学反应模型，用主反应和与主反应平行进行的寄生反应来描述GaN的实际生长过程，并将此数值模拟得到的GaN沉积速率和文献中的实验数据进行了对比，发现与在实际MOCVD反应器上相同反应条件时得到的实验数据吻合较好。此外还发现TMGa浓度对GaN的生长速率有较大影响，但并非简单的线性关系。

Abstract

A chemical reaction model with main reactions and parasitic reactions of GaN growth was proposed.The growth process was described as some steps of main reactions with some steps of parasitic reactions

which evolved parallel with the main ones.The growth rate of GaN obtained through numerical simulation was compared with the one from experiment reported in literature

and was consistent with the result of literature.when their experimental outcomes obtained in a real MOCVD reactor were transformed to the same condition of the simulation model.It was shown that the GaN growth rate was influenced sharply by the concentration of TMGa

but there was no simply linear relationship between them.

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