Metalization is widely used in integrated circuit devices to connect millions of devices together. The success of metallization depends strongly on diffusion barrier technology

due to the interactions of metals with surrounding materials. As device dimension further shrinks

diffusion barrier technology is facing more challenges and opening up new opportunities

particularly for chemical vapor deposition (CVD) process technology. CVD is attracting increased attention in advanced metallization mainly due to its capability in producing conformal thin films. In this review

we will focus our discussion on CVD processes for three most important classes of diffusion barriers: Ti

W and Ta-based diffusion banters. Examples from current literature will be examined.