Fabrication process of MEMS print head based on silicon-silicon low temperature direct bonding

Yanzhao ZHAI; Anjiang CAI; Dongpeng ZHANG; Chao HAN; Li LI

doi:10.11949/j.issn.0438-1157.20180919

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Fabrication process of MEMS print head based on silicon-silicon low temperature direct bonding

Material science and engineering\, nanotechnology | 更新时间：2026-07-24

- Fabrication process of MEMS print head based on silicon-silicon low temperature direct bonding
- CIESC Journal Vol. 70, Issue 3, Pages: 1220-1226(2019)
- 作者机构：
  
  1.西安建筑科技大学陕西省纳米材料与技术重点实验室，陕西西安 710055
  2.西安交通大学机械制造系统工程国家重点实验室，陕西西安 710054
  3.中冶宝钢技术服务有限公司，上海 201999
- 作者简介：
- 基金信息：
- DOI：10.11949/j.issn.0438-1157.20180919
  CLC： TP 334.8
- Received：13 August 2018，
  
  Revised：2018-12-24，
  
  Online First：24 July 2026，
  
  Published：05 March 2019
- 稿件说明：
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翟彦昭, 蔡安江, 张栋鹏, 韩超, 李力. 基于硅硅低温直接键合的MEMS打印喷头制作工艺[J]. 化工学报, 2019, 70(3): 1220-1226

ZHAI Yanzhao, CAI Anjiang, ZHANG Dongpeng, HAN Chao, LI Li. Fabrication process of MEMS print head based on silicon-silicon low temperature direct bonding[J]. CIESC Journal, 2019, 70(3): 1220-1226
翟彦昭, 蔡安江, 张栋鹏, 韩超, 李力. 基于硅硅低温直接键合的MEMS打印喷头制作工艺[J]. 化工学报, 2019, 70(3): 1220-1226 DOI： 10.11949/j.issn.0438-1157.20180919.

ZHAI Yanzhao, CAI Anjiang, ZHANG Dongpeng, HAN Chao, LI Li. Fabrication process of MEMS print head based on silicon-silicon low temperature direct bonding[J]. CIESC Journal, 2019, 70(3): 1220-1226 DOI： 10.11949/j.issn.0438-1157.20180919.

摘要

针对一种MEMS压电式集成打印喷头复杂腔室结构的加工，提出了一套基于ICP刻蚀结合硅硅低温直接键合的制作工艺。首先通过ICP体硅干法刻蚀工艺分别制作了打印喷头的上下腔室结构，然后将带有上下腔室结构的两硅片进行低温直接键合，形成完整的打印喷头腔室。通过对打印喷头上下腔室结构的键合实验研究，进一步探索并验证了硅硅低温直接键合的机理，重点研究了不同活化方法和退火时间对复杂腔室结构键合质量的影响，优化了低温直接键合工艺，为带有复杂三维结构的MEMS器件的制作奠定了工艺基础。测试结果表明，制作完成的MEMS打印喷头具有较高的键合强度，且其腔室流道的完整性和密封性良好。

Abstract

Aiming at the processing of complex chamber structure of MEMS piezoelectric integrated print head

a set of fabrication process based on ICP etching combined with silicon-silicon low temperature direct bonding was proposed. Firstly

the upper and lower chamber structures of the print head are separately fabricated by the ICP bulk silicon dry etching process

and then the two silicon wafers with the chamber structures are directly bonded at a low temperature to form a complete print head chamber. Through bonding experiments on the upper and lower chamber structures of the print head

the mechanism of silicon-silicon low temperature direct bonding was further explored and verified. Besides

the effects of different activation methods and annealing time on bonding quality were analyzed

and the bonding process was optimized. The low temperature direct bonding process lays the foundation for the fabrication of MEMS devices with complex three-dimensional structures. The test results show that the finished MEMS print head has a high bonding strength

and the chamber flow channel has good integrity and sealing.

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Keywords

references

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