Hexagonal aluminum nitride (h-AlN) is a kind of new Ⅲ-Ⅴ two-dimensional material. It has similar molecular structure and material properties with graphene and has been extensively focused. However

its thermal conductivity property has not been fully studied. In this paper

the thermal stability and thermal conductivity of single-layer h-AlN films at different temperatures have been studied

and its phonon dispersion also has been analyzed by using molecular dynamics simulation. The results show that single-layer h-AlN materials maintain structural stability at very high temperature (3500 K)

and the thermal conductivity can reach 264.2 W·m-1·K-1 at room temperature. As result of phonon scattering

the thermal conductivity of the material is significantly reduced at temperatures above 500 K. These findings will provide theoretical guidance for the control of heat conducting of h-AlN materials and the application of high-temperature heat-conducting materials.