氧化亚铜纳米线的制备及其光电性能

ZHANG Weiguo; LIU Weixing; LI He; YAO Suwei

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氧化亚铜纳米线的制备及其光电性能

更新时间：2025-12-10

- 氧化亚铜纳米线的制备及其光电性能
- CIESC Journal Issue 12, (2007)
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- Online First：05 December 2007，
  
  Published：05 December 2007
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ZHANG Weiguo, LIU Weixing, LI He, et al. 氧化亚铜纳米线的制备及其光电性能[J]. CIESC Journal, 2007, (12).
DOI：

ZHANG Weiguo, LIU Weixing, LI He, et al. 氧化亚铜纳米线的制备及其光电性能[J]. CIESC Journal, 2007, (12). DOI：

摘要

通过电沉积法在阳极氧化铝模板中制备了Cu2O纳米线，利用X射线衍射(XRD)、扫描电子显微镜(SEM)对Cu2O纳米线的组成和形貌进行了表征，并测试了Cu2O/AAO阵列体系的光电压、交流阻抗性能。测试结果表明，制备的Cu2O纳米线的直径约120nm，长约2μm；Cu2O/AAO阵列体系在紫外灯(365nm)照射下，光电压约25mV

阻抗值大大减小。

Abstract

Cu2O nanowires were successfully synthesized by an electrochemical method using alumina membrane as template. The composition and morphology of nanowires were characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The photo-potential and electrochemical impedance spectroscopy experiments of Cu2O/AAO were also performed. The results showed that the diameter of the Cu2O nanowires was about 120 nm and their length was 2 μm. The photo-potential was about 25 mV and the electrochemical impedance of Cu2O/AAO was much smaller under the light of 365 nm.

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