Performance optimization of OLED device with LB film of PEDOT-PSS
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Performance optimization of OLED device with LB film of PEDOT-PSS
CIESC JournalIssue 6, Pages: 1582-1586(2010)
作者机构:
1. 电子科技大学光电信息学院
2. 电子薄膜与集成器件国家重点实验室
作者简介:
基金信息:
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CLC:
Online First:05 June 2010,
Published:05 June 2010
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ZHENG Huajing, JIANG Yadong, XU Jianhua, et al. Performance optimization of OLED device with LB film of PEDOT-PSS[J]. CIESC Journal, 2010, (6): 1582-1586.
DOI:
ZHENG Huajing, JIANG Yadong, XU Jianhua, et al. Performance optimization of OLED device with LB film of PEDOT-PSS[J]. CIESC Journal, 2010, (6): 1582-1586.DOI:
Performance optimization of OLED device with LB film of PEDOT-PSS
Due to its high conductivity and stability,good optical transparency characteristics and easy synthesis,poly(3,4-ethylenedioxythiophene)(PEDOT)has wide application prospects in the antistatic coating,organic,display device,energy storage transformation,sensor,etc.in recent years.A Langmuir-Blodgett(LB)inducing method was firstly used to prepare single layer and multilayer conducting composite poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT-PSS)film. The application of PEDOT nanostructure to improving organic electric device performance of organic light-emitting diode(OLED)was studied.Furthermore,this conducting polymeric LB film was utilized as the hole transfer layer in the OLED device,and efficiency enhancement by carrier injection was observed,which was ascribed to the ordered structure of this film.However,further investigation showed that this PEDOT-PSS film had inferior structure ability.
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