ELECTRODEPOSITE Cu/Co NANOMULTILAYER ON SINGLE CRYSTAL Si AND ITS GIANT MAGNETORESISTANCE EFFECT

YAO Suwei; ZHAO Jin; ZHANG Weiguo; DONG Dawei

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ELECTRODEPOSITE Cu/Co NANOMULTILAYER ON SINGLE CRYSTAL Si AND ITS GIANT MAGNETORESISTANCE EFFECT

更新时间：2025-12-10

- ELECTRODEPOSITE Cu/Co NANOMULTILAYER ON SINGLE CRYSTAL Si AND ITS GIANT MAGNETORESISTANCE EFFECT
- CIESC Journal Issue 3, Pages: 414-417(2004)
- 作者机构：
  
  天津大学化工学院杉山表面技术研究室,天津,300072
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Online First：25 March 2004，
  
  Published：25 March 2004
- 稿件说明：
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YAO Suwei, ZHAO Jin, ZHANG Weiguo, et al. ELECTRODEPOSITE Cu/Co NANOMULTILAYER ON SINGLE CRYSTAL Si AND ITS GIANT MAGNETORESISTANCE EFFECT[J]. CIESC Journal, 2004, (3): 414-417.
DOI：

YAO Suwei, ZHAO Jin, ZHANG Weiguo, et al. ELECTRODEPOSITE Cu/Co NANOMULTILAYER ON SINGLE CRYSTAL Si AND ITS GIANT MAGNETORESISTANCE EFFECT[J]. CIESC Journal, 2004, (3): 414-417. DOI：

摘要

采用双脉冲控电位技术在单晶硅上沉积了一系列Cu/Co纳米多层膜，调制波长从200nm到5nm不等.用扫描电镜及X射线衍射对多层膜的调制结构进行了表征.采用四探针法测试多层膜的巨磁电阻（GMR）效应，研究了GMR与调制波长（λ）、铜的子层厚度（δCu）的关系：λ较大时，没有观察到明显的GMR效应；λ＜30nm时，GMR效应随λ减小而增大；而λ＜8nm时，GMR值随铜层厚度的变化周期性振荡.

Abstract

In this study，a series of Cu/Co nanomultilayers with the wavelength from 200nm to 5nm were prepared by using single-bath methods and the multilayered structure was studied by using SEM and XRD. The relationship between giant magnetoresistance (GMR) and wavelength(λ) and Cu layer thickness（δCu） of the multilayer was investigated by using four point probe technique.When λ was rather big，no GMR effect was found.When λ was smaller than 30nm，GMR increased with the decrease of λ，but when λ was smaller than 8nm，GMR vibrated periodically with the change of Cu layer thickness.

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