化工学报 ›› 2020, Vol. 71 ›› Issue (4): 1836-1843.doi: 10.11949/0438-1157.20191423

• 材料化学工程与纳米技术 • 上一篇    下一篇

一步电沉积法制备硫化镍/泡沫镍材料及其赝电容性能研究

赵少飞1(),刘鹏1,李婉萍1,曾小红1,钟远红1,余林1(),曾华强1,2()   

  1. 1.广东工业大学轻工化工学院，广东 广州 510006
    2.纳米生物实验室，新加坡 138669
  • 收稿日期:2019-11-25 修回日期:2020-02-05 出版日期:2020-04-05 发布日期:2020-02-12
  • 通讯作者: 余林,曾华强 E-mail:sfzhao@gdut.edu.cn;gych@gdut.edu.cn;hqzeng@nbl.a-star.edu.sg
  • 作者简介:赵少飞（1985—），男，博士研究生，sfzhao@gdut.edu.cn
  • 基金资助:
    国家自然科学基金项目(21306026)

One-step electrodeposition and pseudocapacitance properties of 3D Ni3S2 supported on Ni foam

Shaofei ZHAO1(),Peng LIU1,Wanping LI1,Xiaohong ZENG1,Yuanhong ZHONG1,Lin YU1(),Huaqiang ZENG1,2()   

  1. 1.School of Chemical Engineering & Light Industry, Guangdong University of Technology, Guangzhou 510006, Guangdong, China
    2.Nanobio Laboratory, Singapore 138669, Singapore
  • Received:2019-11-25 Revised:2020-02-05 Online:2020-04-05 Published:2020-02-12
  • Contact: Lin YU,Huaqiang ZENG E-mail:sfzhao@gdut.edu.cn;gych@gdut.edu.cn;hqzeng@nbl.a-star.edu.sg

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摘要：

通过一步电化学沉积法在泡沫镍(Ni foam，NF)集流体上制备了3D硫化镍(Ni3S2)材料，利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、拉曼光谱(Raman)、X射线光电子能谱(XPS)等对所制备材料的物化结构和形貌进行了表征，并采用循环伏安法(CV)、恒流充放电法(GCD)研究了其作为超级电容器电极的电化学性能。测试结果表明，制备的Ni3S2/NF-10材料具有相互连接的3D结构，表现出优异的赝电容性能。在1 A/g电流密度下，比电容高达2850 F/g。将电流密度提高到10 A/g，该材料比电容仍能达到1972 F/g，说明其具有优异的倍率性能。测试结果表明所制备的Ni3S2材料有望应用于电化学储能领域。

关键词: 超级电容器, 硫化镍, 赝电容, 电沉积, 电化学, 泡沫镍

Abstract:

In this work, a facile one-step electrodeposition method is developed to prepare 3D Ni3S2 interconnected nanosheet arrays on Ni foam as electrodes for suprecapacitors, resulting in excellent pseudocapacitance performance. The composition, microstructure and morphology of the prepared Ni3S2 materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The electrochemical capacitance properties were tested by cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) measurements in a three-electrode system. Taking advantage of the highly conductive 3D architectures, the Ni3S2/NF-10 electrode exhibits a superior specific capacitance of 2850 F/g at current density of 1 A/g. Remarkably, a specific capacitance of 1972 F/g could be still achieved at a high current density of 10 A/g, indicating its excellent rate capability. With the increase of the electrodeposition time, the 3D architectures of Ni3S2 begin to disappear, resulting in a reduced specific capacitance. The appropriate electrodeposition conditions is the key of preparation of high performance electrode materials. Test results show that the prepared Ni3S2 material is expected to be used in the field of electrochemical energy storage.

Key words: supercapacitor, Ni3S2, pseudocapacitance, electrodeposition, electrochemistry, Ni foam

中图分类号: 

  • TQ 152

图1

Ni3S2的XRD、拉曼及XPS谱图"

图2

Ni3S2@NF材料的SEM 图"

图3

不同扫描速率下Ni3S2@NF-10电极的循环伏安曲线及峰电流与扫描速率的关系"

图4

Ni3S2@NF-10在不同电流密度下的放电曲线及不同材料的比电容"

图5

Ni3S2@NF-10,20,40在5和100 mV/s扫速下的CV曲线"

图6

Ni3S2@NF-10循环性能曲线及2000次循环后的SEM图"

表1

不同电极材料电化学性能比较"

电极材料电流密度/(A/g)比电容/(F/g)循环后比电容/(F/g)文献
3D Ni3S2纳米片@NF213701075.9(1000次，6 A/g)[5]
核壳结构Ni3S2@NF0.8736.64604(1000次，0.8 A/g)[7]
NiCo2S4 纳米片@C11394.51581.4(10000次，10 A/g)[15]
Ni3S2纳米柱/石墨烯@NF11900950(2000次，10 A/g)[17]
Ni3S2纳米片@NF228851000(10000次，50 A/g)[21]
Ni3S2 纳米片@NF1773.6575(5000次，5 A/g)[22]
Ni3S2-Cu1.8S 纳米片@NF11686766.8(1000次，10 A/g)[26]
NiCo2S4纳米阵列@NF11777815(3000次，10 A/g)[27]
NiCo2S4纳米片@NF119561722(5000次，2 A/g)[28]
Ni1Co1-S@NF0.52553.91914.6(10000次，20 A/g)[29]
Ni3S2-NiS51077.3660.5(10000次，20A/g)[30]
3D Ni3S2@NF-1012850744(2000次，10 A/g)本文
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